Structure and Ultraviolet Electroluminescence of n-ZnO/SiO2-ZnO Nanocomposite/p-GaN Heterostructure Light-Emitting Diodes

被引：12

作者：

Chen, Miin-Jang ^{[1
]}

Shih, Ying-Tsang ^{[1
]}

Wu, Mong-Kai ^{[1
]}

Chen, Hsing-Chao ^{[1
]}

Tsai, Hung-Ling ^{[1
]}

Li, Wei-Chih ^{[1
]}

Yang, Jer-Ren ^{[1
]}

Kuan, Hon ^{[2
]}

Shiojiri, Makoto ^{[3
]}

机构：

[1] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10617, Taiwan

[2] So Taiwan Univ, Dept Electroopt Engn, Tainan 710, Taiwan

[3] Kyoto Inst Technol, Kyoto 6180091, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 09期

关键词：

Atomic layer deposition (ALD); heterostructure light-emitting diode (LED); nanodot; ultraviolet (UV); zinc oxide (ZnO); ATOMIC LAYER DEPOSITION; STIMULATED-EMISSION; ZNO; GROWTH;

D O I：

10.1109/TED.2010.2053375

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated and characterized ultraviolet (UV) light-emitting diodes (LEDs) composed of n-ZnO/SiO2-ZnO nanocomposite/p-GaN heterostructures. Significant UV electroluminescence at 387 nm from the n-ZnO layer in this heterostructure LED was observed at a forward-bias current of as low as 1.8 mA. This is ascribed to the high quality of the n-ZnO layer and the effective function of the SiO2-ZnO nanocomposite layer. The SiO2-ZnO nanocomposite layer accomplishes the role of current blocking by forming the larger energy barrier for electron injection from n-ZnO into p-GaN and also contributes to, due to its low refractive index, higher light extraction efficiency from the n-ZnO layer.

引用

页码：2195 / 2202

页数：8

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