Ultrahigh Thermoelectric Performance in Environmentally Friendly SnTe Achieved through Stress-Induced Lotus-Seedpod-Like Grain Boundaries

被引：56

作者：

Guo, Fengkai ^{[1
]}

Cui, Bo ^{[2
]}

Li, Chun ^{[3
]}

Wang, Yumei ^{[4
]}

Cao, Jian ^{[3
]}

Zhang, Xinghong ^{[5
]}

Ren, Zhifeng ^{[6
,7
]}

Cai, Wei ^{[1
]}

Sui, Jiehe ^{[1
]}

机构：

[1] Harbin Inst Technol, Natl Key Lab Precis Hot Proc Met, Harbin 150001, Peoples R China

[2] China Acad Engn Phys, Inst Nucl Phys & Chem, Mianyang 621900, Sichuan, Peoples R China

[3] Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150001, Peoples R China

[4] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China

[5] Harbin Inst Technol, Natl Key Lab Sci & Technol Adv Composites Special, Harbin 150001, Peoples R China

[6] Univ Houston, Dept Phys, Houston, TX 77204 USA

[7] Univ Houston, TcSUH, Houston, TX 77204 USA

来源：

ADVANCED FUNCTIONAL MATERIALS | 2021年 / 31卷 / 31期

基金：

黑龙江省自然科学基金; 中国国家自然科学基金;

关键词：

dislocation; grain boundaries; pores; SnTe; thermoelectrics; THERMAL-CONDUCTIVITY; RESONANCE LEVELS; ENHANCEMENT; TRANSPORT; BI;

D O I：

10.1002/adfm.202101554

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In an effort to improve the thermoelectric performance of the environmentally friendly SnTe, here, a multilevel structure composed of "lotus-seedpod-like" grain boundaries, dense dislocations, and nanopores is innovatively constructed, which synergistically reduces the sound velocity and the phonon relaxation time, resulting in ultralow lattice thermal conductivity throughout a wide temperature range. An ultrahigh figure of merit, ZT, of approximate to 1.7 and an unprecedented average ZT of approximate to 1 from 300 to 873 K are obtained. In contrast to the common pore-forming method of volatilization, the strategy of stress-induced recrystallization and gas expansion cogenerating interfacial pores that is used here, is believed to be more widely applicable for many other materials, which opens up a new avenue for improving thermoelectric performance.

引用

页数：9