Optical properties of plasma-enhanced chemical vapor deposited SiCxNy films by using silazane precursors

被引：14
作者：
Chang, Wei-Yuan [1 ]
Chang, Chieh-Yu [1 ]
Leu, Jihperng [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan
来源：
THIN SOLID FILMS | 2017年 / 636卷
关键词：
Silicon carbonitride films; Silazane precursor; Transmittance; Optical band gap; Optical properties; PECVD; LOW DIELECTRIC-CONSTANT; SICN-H FILMS; SILICON CARBONITRIDE; MECHANICAL-PROPERTIES; INFRARED-SPECTRA; THIN-FILM; CVD; SURFACE; BEHAVIOR; HARD;
D O I：
10.1016/j.tsf.2017.07.016
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, amorphous silicon carbonitride (SiCxNy) films were fabricated by radio frequency (RF) chemical vapor deposition (PECVD) using a single silazane precursor and a low power density (0.15W/cm(3)) for better compositional control. The effects of the precursor chemical structure (C/Si ratio, C-Si-N structure, and vinyl groups) and deposition temperature (T-s) on the chemical structure and optical properties of SiCxNy films were examined using Fourier-transform infrared spectroscopy and X-ray photoelectron spectroscopy. Specifically, two new single precursors; namely, n-methyl-aza-2,2,4-trimethylsilacyclopentane (MTSCP) and 1,3-divinyl-1,1,3,3-tetramethyl-disilazane (DVTMDS) were studied and compared. SiCxNy films deposited using MTSCP involving Si-C-3-N rings formed Si-N and Si-(CH2)(3)-crosslinked structures at T-s <= 100 degrees C, and were then changed to predominantly Si-CH2-N-Si crosslinked structures at Ts > 300 degrees C, leading to a wide range of optical band gap from 5.2 to 3.7 eV. Compared to DVTMDS-deposited SiCxNy films, their relatively higher percentage of Si-C-N structure accounted for the lower optical band gap and reduced transmission. DVTMDS with di-vinyl groups readily formed a Si-(CH2)(2)-bridge in SiCxNy films Ts <= 200 degrees C, resulting in excellent optical transmittance. The transmittance in the visible wavelengths of 400 degrees C-deposited SiCxNy film using DVTMDS still showed 85%. Also, tunable refractive index between 1.44 and 2.10 were obtained for SiCxNy films deposited at T-s <= 400 degrees C. (c) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：671 / 679
页数：9
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