A High Tensile Stress Spacer by Low Temperature Microwave Anneal Induced 50% Mobility Enhancement for Nano Scale FinFETs Device

被引:0
|
作者
Chen, Yi-Ju [1 ]
Huang, Yao-Ming [1 ]
Hou, Yun-Fang [1 ]
Chen, Min-Cheng [1 ]
Lee, Yao-Jen [1 ,2 ]
Wu, Wen-Fa [1 ]
Shieh, Jia-Ming [1 ]
机构
[1] Natl Nano Device Labs, Hsinchu, Taiwan
[2] Natl Chung Hsing Univ, Dept Phys, Taichung, Taiwan
来源
PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015) | 2015年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Tensile stress enhancement by rapid thermal annealing (RTA) and microwave annealing (MWA) are compared in this study. SiNx films after low temperature MWA treatment depicted higher tensile stress than the films annealed by RTA. Therefore, MWA approach is useful in contact etch-stop layer or stress memorization technique for the fabrication of small pitch nanoscaled n-channel FinFETs.
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页码:401 / 404
页数:4
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