Effect of SiO2 fence on atomic step flow in chemical etching of Si surface

被引：10

作者：

Hojo, D ^{[1
]}

Tokuda, N ^{[1
]}

Yamabe, K ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 5B期

关键词：

anodic oxidation; atomically flat surface; atomic force microscope (AFM); surface roughening; step free; step pattern controlling; wet etching; atomic step flow;

D O I：

10.1143/JJAP.42.L561

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method of realizing Si surfaces without step lines in predetermined areas surrounded by SiO2 fences was investigated. The SiO2 fence blocked the atomic step flow during chemical etching of the Si surface. Atomic step flow in the downside of the SiO2 fences stopped at the SiO2 fences, while atomic step flow in the upside of the SiO2 fences during the chemical etching of the Si surface was able to progress. This technique is applicable to the fabrication of nanodevices in any predetermined area isolated with SiO2 regions.

引用

页码：L561 / L563

页数：3

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