Diamond nucleation on Cu by using MPCVD with a biasing pretreatment

被引：13
作者：
Chuang, KL [1 ]
Chang, L [1 ]
Lu, CA [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2001年 / 72卷 / 02期
关键词：
nucleation; plasma; chemical vapor deposition;
D O I：
10.1016/S0254-0584(01)00431-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Bias enhanced nucleation of diamond on polycrystalline Cu substrates has been investigated. With CH4 concentration increased, the nucleation density is increased and saturated at 10% CH4, but the quality of diamond is decreased. Bias voltages also play an important role on the nucleation of diamond. It is found that the nucleation density is highest when the voltage was set at -250 V. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：176 / 180
页数：5
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