On the structural and electronic properties of Ir-silicide nanowires on Si(001) surface

被引：8

作者：

Fatima ^{[1
]}

Oguz, Ismail Can ^{[2
]}

Cakir, Deniz ^{[3
]}

Hossain, Sehtab ^{[1
]}

Mohottige, Rasika ^{[1
]}

Gulseren, Oguz ^{[2
]}

Oncel, Nuri ^{[1
]}

机构：

[1] Univ North Dakota, Dept Phys & Astrophys, Grand Forks, ND 58202 USA

[2] Bilkent Univ, Dept Phys, Ankara, Turkey

[3] Univ Antwerp, Dept Phys, B-2610 Antwerp, Belgium

来源：

JOURNAL OF APPLIED PHYSICS | 2016年 / 120卷 / 09期

基金：

美国国家科学基金会;

关键词：

TOTAL-ENERGY CALCULATIONS; AUGMENTED-WAVE METHOD; BASIS-SET; GROWTH; SI(110); GE(001); CHAINS; STATES;

D O I：

10.1063/1.4961550

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Iridium (Ir) modified Silicon (Si) (001) surface is studied with Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and Density Functional Theory (DFT). A model for Ir-silicide nanowires based on STM images and ab-initio calculations is proposed. According to our model, the Ir adatom is on the top of the substrate dimer row and directly binds to the dimer atoms. I-V curves measured at 77K shows that the nanowires are metallic. DFT calculations confirm strong metallic nature of the nanowires. Published by AIP Publishing.

引用

页数：5

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