Recombination luminescence and trap levels in undoped and Al-doped ZnO thin films on quartz and GaSe (0001) substrates

被引：1

作者：

Evtodiev, I. ^{[2
]}

Caraman, I. ^{[3
]}

Leontie, L. ^{[1
]}

Rusu, D-I ^{[3
]}

Dafinei, A. ^{[4
]}

Nedeff, V. ^{[3
]}

Lazar, G. ^{[3
]}

机构：

[1] Alexandru Ioan Cuza Univ, Fac Phys, RO-700506 Iasi, Romania

[2] Moldova State Univ, MD-2009 Kishinev, Moldova

[3] Vasile Alecsandri Univ Bacau, RO-600115 Bacau, Romania

[4] Univ Bucharest, Fac Phys, RO-76900 Bucharest, Romania

来源：

MATERIALS RESEARCH BULLETIN | 2012年 / 47卷 / 03期

关键词：

Inorganic compounds; Thin films; Crystal growth; Luminescence; ZINC-OXIDE FILMS; ROOM-TEMPERATURE; ELECTRICAL-PROPERTIES; DEPOSITION;

D O I：

10.1016/j.materresbull.2011.11.061

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence spectra of ZnO and ZnO:Al (1.00, 2.00 and 5.00 at.%) films on GaSe (0 0 0 1) lamellas and amorphous quartz substrates, obtained by annealing, at 700 K, of undoped and Al-doped metal films, are investigated. For all samples, the nonequilibrium charge carriers recombine by radiative band-toband transitions with energy of 3.27 eV, via recombination levels created by the monoionized oxygen atoms, forming the impurity band laying in the region 2.00 - 2.70 eV. Al doping induces an additional recombination level at 1.13 eV above the top of the valence band of ZnO films on GaSe substrates. As a result of thermal diffusion of Zn and Al into the GaSe interface layer from ZnO:Al/GaSe heterojunction, electron trap levels located at 0.22 eV and 0.26 eV below the conduction band edge of GaSe, as well as a deep recombination level, responsible for the luminescent emission in the region 1.10 - 1.40 eV, are created. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：794 / 797

页数：4

共 17 条

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