Tunable, Low-Power, High-Gain Transimpedance Amplifier for fNIRS Photoreceiver Front-End

被引：0

作者：

Kamrani, Ehsan ^{[1
]}

Sultana, Afrin ^{[1
]}

Sawan, Mohamad ^{[1
]}

机构：

[1] Ecole Polytech, Dept Elect Engn, Polystim Neurotechnol Lab, Montreal, PQ H3C 3A7, Canada

来源：

2011 IEEE 54TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS) | 2011年

关键词：

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

We present in this paper a new Transimpedance Amplifier (TIA) for photoreceiver front-end circuit designed using 0.35 mu m MOS technology to be used in a functional near infrared spectroscopy (fNIRS) system. The main advantages of this circuit are low-power consumption (0.01mW and 0.3mW at 1V and 3V bias voltages) and high transimpedance gain (0.1 to 250 MV/A) accompanying with the tunable high bandwidth (1kHz to 1 GHz). high-speed data rate and very low input and output noise. 1fA/root Hz and 2 mu V/root Hz respectively. The post-layout simulation results confirm the excellent performance of the proposed design compared to latest available photoreceivers.

引用

页数：4

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