Interfacing 2D Semiconductors with Functional Oxides: Fundamentals, Properties, and Applications

被引:19
作者
Yuan, Zhiquan [1 ]
Hou, Jiwei [1 ]
Liu, Kai [1 ]
机构
[1] Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
来源
CRYSTALS | 2017年 / 7卷 / 09期
基金
中国国家自然科学基金;
关键词
two-dimensional semiconductors; functional oxides; interface; heterostructures; FIELD-EFFECT TRANSISTORS; INSULATOR PHASE-TRANSITION; QUANTUM-WELL LASERS; P-N DIODE; MONOLAYER MOS2; MOLYBDENUM-DISULFIDE; ELASTIC PROPERTIES; SCHOTTKY JUNCTION; WORK FUNCTION; BROAD-BAND;
D O I
10.3390/cryst7090265
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Two-dimensional semiconductors, such as transition-metal dichalcogenides (TMDs) and black phosphorous (BP), have found various potential applications in electronic and opto-electronic devices. However, several problems including low carrier mobility and low photoluminescence efficiencies still limit the performance of these devices. Interfacing 2D semiconductors with functional oxides provides a way to address the problems by overcoming the intrinsic limitations of 2D semiconductors and offering them multiple functionalities with various mechanisms. In this review, we first focus on the physical effects of various types of functional oxides on 2D semiconductors, mostly on MoS2 and BP as they are the intensively studied 2D semiconductors. Insulating, semiconducting, conventional piezoelectric, strongly correlated, and magnetic oxides are discussed. Then we introduce the applications of these 2D semiconductors/functional oxides systems in field-effect devices, nonvolatile memory, and photosensing. Finally, we discuss the perspectives and challenges within this research field. Our review provides a comprehensive understanding of 2D semiconductors/functional oxide heterostructures, and could inspire novel ideas in interface engineering to improve the performance of 2D semiconductor devices.
引用
收藏
页数:22
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