Process driven oxygen redistribution and control in Si0.7Ge0.3/HfO2/TaN gate stack film systems

被引：3

作者：

Lysaght, Patrick S. ^{[1
]}

Woicik, Joseph C. ^{[2
]}

Huang, Jeff ^{[1
]}

Oh, Jungwoo ^{[1
]}

Min, Byoung-Gi ^{[1
]}

Kirsch, Paul D. ^{[1
]}

机构：

[1] SEMATECH, Austin, TX 78741 USA

[2] NIST, Gaithersburg, MD 20899 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 08期

关键词：

GESI STRAINED LAYERS; WET OXIDATION; SIGE; PHOTOEMISSION; INTERFACE; SI1-XGEX; KINETICS; SILICON; OXIDES; DRY;

D O I：

10.1063/1.3651519

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bulk and surface sensitive photoemission core line spectra have been acquired for Si and Ge following each step in the process sequence of Si0.7Ge0.3/2 nm HfO2/2.5 nm TaN/950 degrees C gate stack film systems. Extended x-ray absorption fine structure measurements have confirmed Ge segregation and pileup to form a Ge-rich layer at the SiGe surface during Si oxidation. Transmission electron micrograph cross-sections with electron energy loss element profiles have verified the effectiveness of plasma nitridation for restricting SiGe oxidation and achieving <1 nm equivalent oxide thickness with gate leakage current density equivalent to that of Si substrates without the necessity of a Si cap for oxidation control. (C) 2011 American Institute of Physics. [doi:10.1063/1.3651519]

引用

页数：8

共 26 条

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