First orientation-patterned GaSb ridge waveguides fabrication and preliminary characterization for frequency conversion in the mid-infrared

被引：1

作者：

Roux, S. ^{[1
]}

Cerutti, L. ^{[2
,3
]}

Tournie, E. ^{[2
,3
]}

Garcia, M. ^{[4
]}

Gerard, B. ^{[4
]}

Patriarche, G. ^{[5
]}

Grisard, A. ^{[1
]}

机构：

[1] Thales Res & Technol, 1 Ave Augustin Fresnel, F-91767 Palaiseau, France

[2] Univ Montpellier, IES, UMR 5214, F-34000 Montpellier, France

[3] CNRS, IES, UMR 5214, F-34000 Montpellier, France

[4] III V Lab, 1 Ave Augustin Fresnel, F-91767 Palaiseau, France

[5] CNRS, LPN, Route Nozay, F-91460 Marcoussis, France

来源：

NONLINEAR OPTICS AND ITS APPLICATIONS IV | 2016年 / 9894卷

关键词：

quasi-phase matching; low-loss waveguides; orientation-patterned gallium antimonide; orientation-patterned gallium arsenide; frequency conversion; wafer bonding; MBE regrowth; mid-infrared; PHASE-MATCHED GAAS; 2ND-HARMONIC GENERATION;

D O I：

10.1117/12.2225441

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first realization of low-loss orientation-patterned gallium antimonide waveguides for frequency conversion in the mid-infrared. Planar waveguide structures were grown by molecular-beam epitaxy on periodically patterned gallium arsenide templates prepared by wafer bonding. Ridge waveguides were designed and fabricated from the planar structures. Record losses of 0.73 dB/cm in periodically oriented waveguides were measured at 2 mu m.

引用

页数：8

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