Growth and optical properties of solid solution crystals GaSe1-xSx

被引：34
作者：
Kokh, K. A. [1 ,2 ,3 ]
Molloy, J. F. [4 ]
Naftaly, M. [4 ]
Andreev, YuM. [3 ,5 ]
Svetlichnyi, V. A. [3 ]
Lanskii, G. V. [3 ,5 ]
Lapin, I. N. [3 ]
Izaak, T. I. [3 ]
Kokh, A. E. [1 ]
机构：
[1] SB RAS, Inst Geol & Mineral, Novosibirsk, Russia
[2] Novosibirsk State Univ, Novosibirsk 630090, Russia
[3] Tomsk State Univ, Siberian Phys Tech Inst, Tomsk 634050, Russia
[4] Natl Phys Lab, Teddington TW11 0LW, Middx, England
[5] SB RAS, Inst Monitoring Climat & Ecol Syst, Tomsk, Russia
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2015年 / 154卷
关键词：
Electronic materials; Crystal growth; Optical properties; GASE; PHASE; SHG;
D O I：
10.1016/j.matchemphys.2015.01.058
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
GaSe1-xSx (x = 0, 0.01, 0.05, 0.13, 0.22, 0.29, 0.44) crystals were grown by modified vertical Bridgman method that provided (0001) crystal plane orientation perpendicular to growth axis. Absorption coefficient is minimal (decreased by up to 3 times) in the THz range at the optimal S-doping of 3 weight % (x = 0.13). Increased S content causes the absorption coefficient for e-wave to become frequency independent in the main part of the spectrum from 03 to 3 THz. A narrow line-width rigid phonon absorption peak E ''((2)) at 1.79 THz arises and then declines in intensity with the doping level, in parallel with a shift towards shorter wavelength. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：152 / 157
页数：6
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