Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers

被引：3

作者：

Zhao, H. X. ^{[1
]}

Yoon, S. F. ^{[1
]}

Tong, C. Z. ^{[3
]}

Liu, C. Y. ^{[2
]}

Wang, R. ^{[1
]}

Cao, Q. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany

[3] Univ Toronto, Edward S Rogers Sr Dept Elect & Comp Engn, Photon Grp, Toronto, ON, Canada

来源：

NANOSCALE RESEARCH LETTERS | 2011年 / 6卷

关键词：

DENSITY-OF-STATES; DIFFERENTIAL GAIN; DEPENDENCE; WELL; POWER;

D O I：

10.1007/s11671-010-9798-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigate the influence of thermal effects on the high-speed performance of 1.3-mu m InAs/GaAs quantum-dot lasers in a wide temperature range (5-50 degrees C). Ridge waveguide devices with 1.1 mm cavity length exhibit small signal modulation bandwidths of 7.51 GHz at 5 degrees C and 3.98 GHz at 50 degrees C. Temperature-dependent K-factor, differential gain, and gain compression factor are studied. While the intrinsic damping-limited modulation bandwidth is as high as 23 GHz, the actual modulation bandwidth is limited by carrier thermalization under continuous wave operation. Saturation of the resonance frequency was found to be the result of thermal reduction in the differential gain, which may originate from carrier thermalization.

引用

页码：1 / 5

页数：5

共 22 条

[21] Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures [J].

Yuan, S ;

Jagadish, C ;

Kim, Y ;

Chang, Y ;

Tan, HH ;

Cohen, RM ;

Petravic, M ;

Dao, LV ;

Gal, M ;

Chan, MCY ;

Li, EH ;

O, JS ;

Zory, PS .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1998, 4 (04) :629-635

[22] Effects of Thermal Annealing on the Dynamic Characteristics of InAs/GaAs Quantum Dot Lasers [J].

Zhao, H. X. ;

Yoon, S. F. ;

Ngo, C. Y. ;

Wang, R. ;

Tong, C. Z. ;

Liu, C. Y. ;

Cao, Q. .

IEEE PHOTONICS JOURNAL, 2010, 2 (04) :630-635

← 1 2 3 →