Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers

被引：3

作者：

Zhao, H. X. ^{[1
]}

Yoon, S. F. ^{[1
]}

Tong, C. Z. ^{[3
]}

Liu, C. Y. ^{[2
]}

Wang, R. ^{[1
]}

Cao, Q. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany

[3] Univ Toronto, Edward S Rogers Sr Dept Elect & Comp Engn, Photon Grp, Toronto, ON, Canada

来源：

NANOSCALE RESEARCH LETTERS | 2011年 / 6卷

关键词：

DENSITY-OF-STATES; DIFFERENTIAL GAIN; DEPENDENCE; WELL; POWER;

D O I：

10.1007/s11671-010-9798-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigate the influence of thermal effects on the high-speed performance of 1.3-mu m InAs/GaAs quantum-dot lasers in a wide temperature range (5-50 degrees C). Ridge waveguide devices with 1.1 mm cavity length exhibit small signal modulation bandwidths of 7.51 GHz at 5 degrees C and 3.98 GHz at 50 degrees C. Temperature-dependent K-factor, differential gain, and gain compression factor are studied. While the intrinsic damping-limited modulation bandwidth is as high as 23 GHz, the actual modulation bandwidth is limited by carrier thermalization under continuous wave operation. Saturation of the resonance frequency was found to be the result of thermal reduction in the differential gain, which may originate from carrier thermalization.

引用

页码：1 / 5

页数：5

共 22 条

[1] Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers [J].

Cao, Q. ;

Yoon, S. F. ;

Liu, C. Y. ;

Ngo, C. Y. .

NANOSCALE RESEARCH LETTERS, 2007, 2 (06) :303-307

[2] Temperature insensitive linewidth enhancement factor of p-type doped InAs/GaAs quantum-dot lasers emitting at 1.3 μm [J].

Cong, D. -Y. ;

Martinez, A. ;

Merghem, K. ;

Ramdane, A. ;

Provost, J. -G. ;

Fischer, M. ;

Krestnikov, I. ;

Kovsh, A. .

APPLIED PHYSICS LETTERS, 2008, 92 (19)

[3] Modulation characteristics of quantum-dot lasers: The influence of P-type doping and the electronic density of states on obtaining high speed [J].

Deppe, DG ;

Huang, H ;

Shchekin, OB .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (12) :1587-1593

[4] Small-signal modulation characteristics of p-doped 1.1- and 1.3-μm quantum-dot lasers [J].

Fathpour, S ;

Mi, ZT ;

Bhattacharya, P .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (11) :2250-2252

[5] Differential gain and gain compression in quantum-dot lasers [J].

Fiore, Andrea ;

Markus, Alexander .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2007, 43 (3-4) :287-294

[6] Photon lifetime dependence of modulation efficiency and K factor in 1.3 μm self-assembled InAs/GaAs quantum-dot lasers:: Impact of capture time and maximum modal gain on modulation bandwidth [J].

Ishida, M ;

Hatori, N ;

Akiyama, T ;

Otsubo, K ;

Nakata, Y ;

Ebe, H ;

Sugawara, M ;

Arakawa, Y .

APPLIED PHYSICS LETTERS, 2004, 85 (18) :4145-4147

[7] Theoretical and experimental study of optical gain, refractive index change, and linewidth enhancement factor of p-doped quantum-dot lasers [J].

Kim, Jungho ;

Chuang, Shun Lien .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2006, 42 (9-10) :942-952

[8] High-frequency modulation characteristics of 1.3-μm InGaAs quantum dot lasers [J].

Kim, SM ;

Wang, Y ;

Keever, M ;

Harris, JS .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (02) :377-379

[9] Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers [J].

Kirstaedter, N ;

Schmidt, OG ;

Ledentsov, NN ;

Bimberg, D ;

Ustinov, VM ;

Egorov, AY ;

Zhukov, AE ;

Maximov, MV ;

Kopev, PS ;

Alferov, ZI .

APPLIED PHYSICS LETTERS, 1996, 69 (09) :1226-1228

[10] Temperature dependence of dynamic and DC characteristics of quantum-well and quantum-dot lasers: A comparative study [J].

Klotzkin, D ;

Bhattacharya, P .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1999, 17 (09) :1634-1642

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