Anomalous Hall magnetoresistance in single-crystal Fe(001) films

被引：8

作者：

Jia, M. W. ^{[1
,2
]}

Li, J. X. ^{[1
,2
]}

Chen, H. R. ^{[1
,2
]}

Zeng, F. L. ^{[1
,2
]}

Xiao, X. ^{[3
]}

Wu, Y. Z. ^{[1
,2
]}

机构：

[1] Fudan Univ, Dept Phys, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

[2] Fudan Univ, Adv Mat Lab, Shanghai 200433, Peoples R China

[3] Liaocheng Univ, Sch Phys Sci & Informat Technol, Shandong Key Lab Opt Commun Sci & Technol, Liaocheng 252059, Shandong, Peoples R China

来源：

NEW JOURNAL OF PHYSICS | 2020年 / 22卷 / 04期

基金：

中国国家自然科学基金;

关键词：

anisotropic magnetoresistance; anomalous Hall magnetoresistance; angular dependent magnetoresistance; ANISOTROPIC MAGNETORESISTANCE; EPITAXIAL FE; THIN;

D O I：

10.1088/1367-2630/ab7d7b

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The angular-dependent magnetoresistance (MR) in epitaxial Fe(001) films grown on MgO(001) is systematically investigated at room temperature. The resistivities with in-plane magnetic fields parallel (rho(x)) and transverse (rho(y)) to a current and a perpendicular field (rho(z)) show a correlation of rho(z) approximate to rho(x) > rho(y) for Fe film thickness (d(Fe)) between 3 and 50 nm, which is distinctly different from the conventional anisotropic MR relation of rho(x) > rho(y) approximate to rho(z). The dependence of such unusual MR on d(Fe) is quantitatively explained by the competition between the anomalous Hall MR, intrinsic anisotropic MR, and the MR induced by the geometrical size effect in Fe films. Our results also reveal the strong four-fold symmetric terms in the measured angular-dependent MR with a linear dependence of 1/d(Fe).

引用

页数：8

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