Soluble fullerene derivatives: The effect of electronic structure on transistor performance and air stability

被引:21
作者
Ball, James M. [1 ]
Bouwer, Ricardo K. M. [2 ,3 ]
Kooistra, Floris B. [2 ,4 ]
Frost, Jarvist M. [1 ]
Qi, Yabing [5 ]
Domingo, Ester Buchaca [6 ]
Smith, Jeremy [1 ]
de Leeuw, Dago M. [7 ]
Hummelen, Jan C. [2 ,4 ]
Nelson, Jenny [1 ]
Kahn, Antoine [5 ]
Stingelin, Natalie [6 ]
Bradley, Donal D. C. [1 ]
Anthopoulos, Thomas D. [1 ]
机构
[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Dept Phys, London SW7 2AZ, England
[2] Univ Groningen, Stratingh Inst Mol Chem, NL-9747 AG Groningen, Netherlands
[3] Dutch Polymer Inst, NL-56000 AX Eindhoven, Netherlands
[4] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands
[5] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[6] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England
[7] Phillips Res Labs, NL-5656 AE Eindhoven, Newfoundland &, Netherlands
基金
美国国家科学基金会; 英国工程与自然科学研究理事会;
关键词
THIN-FILM TRANSISTORS; ORGANIC TRANSISTORS; POLYMER; MOBILITY; METHANOFULLERENE; SEMICONDUCTORS; EFFICIENCIES; INJECTION; DESIGN; C-60;
D O I
10.1063/1.3605531
中图分类号
O59 [应用物理学];
学科分类号
摘要
The family of soluble fullerene derivatives comprises a widely studied group of electron transporting molecules for use in organic electronic and optoelectronic devices. For electronic applications, electron transporting (n-channel) materials are required for implementation into organic complementary logic circuit architectures. To date, few soluble candidate materials have been studied that fulfill the stringent requirements of high carrier mobility and air stability. Here we present a study of three soluble fullerenes with varying electron affinity to assess the impact of electronic structure on device performance and air stability. Through theoretical and experimental analysis of the electronic structure, characterization of thin-film structure, and characterization of transistor device properties we find that the air stability of the present series of fullerenes not only depends on the absolute electron affinity of the semiconductor but also on the disorder within the thin-film. (C) 2011 American Institute of Physics. [doi:10.1063/1.3605531]
引用
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页数:9
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