Growth of GaN crystals from molten solution with Ga free solvent using a temperature gradient

被引：13

作者：

Feigelson, BN

Henry, RL

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Geocenters Inc, Ft Washington, MD 20749 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 281卷 / 01期

关键词：

solvents; growth from high temperature solutions; single crystal growth; GaN; nitrides;

D O I：

10.1016/j.jcrysgro.2005.03.050

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaN bulk crystals are grown at moderate temperature and pressure from solution using solid GaN as the feedstock. Gallium-free solvents composed of Li3N plus fluoride salts enable GaN feedstock to be dissolved and transported through the liquid phase then deposited in a cooler location within the crucible. Growth parameters are presented along with characterization data collected for resulting GaN crystals. As a preliminary result, single crystals 0.5 mm long with a rhombic cross section (0.1 mm across) have been grown. The long axis of the crystals is aligned with the r direction. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：5 / 10

页数：6

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