The rectifying and negative differential resistance effects in graphene/h-BN nanoribbon heterojunctions

被引：42

作者：

An, Yipeng ^{[1
]}

Zhang, Mengjun ^{[1
]}

Wu, Dapeng ^{[2
]}

Wang, Tianxing ^{[1
]}

Jiao, Zhaoyong ^{[1
]}

Xia, Congxin ^{[1
]}

Fu, Zhaoming ^{[1
,3
]}

Wang, Kun ^{[4
,5
]}

机构：

[1] Henan Normal Univ, Coll Phys & Mat Sci, Xinxiang 453007, Peoples R China

[2] Henan Normal Univ, Sch Chem & Chem Engn, Xinxiang 453007, Peoples R China

[3] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[4] Univ Georgia, Dept Phys & Astron, Athens, GA 30602 USA

[5] Univ Georgia, NanoSEC, Athens, GA 30602 USA

来源：

PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2016年 / 18卷 / 40期

基金：

中国国家自然科学基金;

关键词：

BORON-NITRIDE; HETEROSTRUCTURES;

D O I：

10.1039/c6cp05912k

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigate the electronic transport properties of four types of lateral graphene/h-BN nanoribbon heterojunctions using the non-equilibrium Green's function method in combination with the density functional theory. The results show that the heterojunction displays an interesting rectifying effect when the interface has a left-right type structure, while a pronounced negative differential resistance (NDR) effect when the interface has an up-down type structure. Moreover, when the interface of the heterojunction has a left-bank or right-bank type structure, it presents the rectifying (with a larger rectification ratio) and NDR effects. This work is helpful to further construct and prepare a nanodevice based on the graphene/h-BN heterojunction materials according to the proposed structures.

引用

页码：27976 / 27980

页数：5

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