Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states

被引：3

作者：

Pintilie, I. ^{[1
,3
]}

Moscatell, F. ^{[2
]}

Nipoti, R. ^{[2
]}

Poggi, A. ^{[2
]}

Solmi, S. ^{[2
]}

Lovlie, L. S. ^{[3
]}

Svensson, B. G. ^{[3
]}

机构：

[1] Natl Inst Mat Phys, Bucharest 077125, Romania

[2] CNR IMM, I-40129 Bologna, Italy

[3] Univ Oslo, Ctr Mat Sci & Nanotech, Dept Phys, N-0316 Oslo, Norway

来源：

SILICON CARBIDE AND RELATED MATERIALS 2010 | 2011年 / 679-680卷

关键词：

SIC; n-MOS capacitors; N implantation; C-V; interface states; border traps; tunneling; TDRC; NITROGEN;

D O I：

10.4028/www.scientific.net/MSF.679-680.346

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Comparative studies of gate oxides on a N+ pre-implanted area (N-interface similar to 1x10(19)cm(-3)) and on a virgin Si face 4H-SiC material (N-interface similar to 1x10(16)cm(-3)) have been undertaken by means of Capacitance-Voltage (C-V) characteristics, performed at different temperatures and frequencies, and Thermal Dielectric Relaxation Current technique. In the non implanted samples, the stretch out of the C-V curves get larger as the temperature is lowered to 150K, while for lower temperatures the C-V characteristics become steeper and some discontinuities occur. These discontinuities are specific for the non-implanted sample and are associated with charging of the fast near interface states (NIToxfast) via a tunneling from the shallow interface states (D-it). The tunneling from the shallow D-it to NIToxfast supress the a.c. response of D-it, which is recovered only after most of the NIToxfast are charged with electrons.

引用

页码：346 / +

页数：2

共 12 条

[1] Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation [J].