Growth and electrical characteristics of rf magnetron sputtered Ta2O5 films on Si

被引：0

作者：

Chandra, S. V. Jagadeesh ^{[1
]}

Reddy, P. Sreedhara ^{[1
]}

Rao, G. Mohan ^{[2
]}

Uthanna, S. ^{[1
]}

机构：

[1] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India

[2] Indian Inst Sci, Dept Instrument, Bangalore 560012, Karnataka, India

来源：

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2007年 / 1卷 / 10期

关键词：

tantalum oxide; rf magnetron sputtering; structure; electrical properties;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Rf magnetron sputter technique was used for deposition of Ta2O5 films on silicon (111) and quartz substrates by sputtering of tantalum target under various oxygen partial pressures in the range 5x10(-5)-5x10(-4) mbar and at a substrate temperature of 673 K. The effect of oxygen partial pressure on the chemical binding configuration, crystal structure, electrical and optical properties was investigated. The X-ray photoelectron spectra revealed that the films formed at oxygen partial pressure >= 1x10(-4) mbar were stoichiometric. The dielectric constant increased from 17 to 22 by increasing the oxygen partial pressure from 5x10(-5) to 5x10(-4) mbar due to the improvement in the crystallinity and packing density of the films. The single phase films formed at an oxygen partial pressure of 1x10(-4) mbar showed low leakage current density of 4x10(-9) A/cm(2). The optical band gap of the films increased from 4.36 to 4.44 eV with the increase of oxygen partial pressure.

引用

页码：496 / 499

页数：4

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