Resistive Switching Characteristics of Al2O3 Film for Transparent Nonvolatile Memory

被引：5

作者：

Kim, Myeongcheol ^{[1
]}

Choi, Kyung Cheol ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch Elect Engn, Daejeon 305701, South Korea

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2017年 / 16卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

Memory; multilayer electrode; resistive memory; transparent electrode;

D O I：

10.1109/TNANO.2017.2723421

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Transparent resistive memory requires a transparent electrode and thin storage layer. In this letter, we highlight the importance of a dielectric and metal multilayer electrode for transparency with good flexible characteristics also. In particular, we utilized the stable properties of resistive memory obtained from an inserted thin layer near the oxide layer. The optimized thickness of the whole structure was calculated by MATLAB simulation, which followed the model of the optical transfer matrix theory. The transparent resistive memory has stable resistive switching behaviors.

引用

页码：1129 / 1131

页数：3

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