POWER DENSITY COMPARATIVE ANALYSIS CONCERNING TO THREE TRANSISTOR TECHNOLOGIES APPLIED TO A CCM PFC BOOST CONVERTER USING OPTIMIZATION TECHNIQUES

被引:0
|
作者
Sartori, Hamiltom C. [1 ]
Beltrame, Fernando [1 ]
Figueira, Henrique H. [1 ]
Baggio, Jose E. [1 ]
Pinheiro, Jose R. [1 ]
机构
[1] Fed Univ Santa Maria UFSM, Power Elect & Control Grp GEPOC, BR-97105900 Santa Maria, RS, Brazil
来源
2013 BRAZILIAN POWER ELECTRONICS CONFERENCE (COBEP) | 2013年
关键词
Boost converter; heat sink design; power density; switch losses; transistor technologies;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
A transistor technology comparative analysis applied to a CCM PFC BOOST converter, aiming to identify the technology that shows the highest volumetric power density for a particular application is discussed. For this analysis, a comparison among three different transistors technologies namely traditional MOSFET, CoolMOSC3 and CoolMOSCP is performed. The calculation of the transistors losses and its heat transfer system are discussed. An analysis of different operation points (Delta i @ fs) is performed, pointing the optimum point for the maximum power density for each transistor technology. From these derivative points the comparisons are done. The power diode and the magnetic material utilized for the Boost inductor and EMI filter cores are the same for all three designs.
引用
收藏
页码:1317 / 1323
页数:7
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