Synthesis of PSi-n/CuO-p/Cu2O-n heterostructure for CO2 gas sensing at room temperature

被引:16
作者
Bouachma, Soraya [1 ,2 ]
Ayouz-Chebout, Katia [1 ]
Kechouane, Mouhamed [2 ]
Manseri, Amar [3 ]
Yaddadene, Chafiaa [1 ]
Menari, Hamid [3 ]
Gabouze, Noureddine [1 ]
机构
[1] Res Ctr Semicond Technol Energet CRTSE, Nanoarchitectured Silicon & Metall Oxides Energy, CMSI Div, 02 Ave Doctor Frantz Fanon, Algiers, Algeria
[2] Univ Sci & Technol Houari Boumed USTHB, Phys Mat Lab, Fac Phys, El Alia,POB 32,DZ-16111 Bab Ezzouar, Algiers, Algeria
[3] Characterizat Serv Res Ctr Semiconductors Technol, 02 Bd Frantz Fanon,07 Merveilles BP: 140, Algiers 16038, Algeria
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2022年 / 128卷 / 01期
关键词
Porous silicon; CuO; Cu2O; Heterostructure; CO2; Gas sensing; OXIDE THIN-FILMS; SURFACE-PROPERTIES; OPTICAL-PROPERTIES; SENSORS; CU2O; CUO; SENSITIVITY; COMPOSITE; PERFORMANCE; MORPHOLOGY;
D O I
10.1007/s00339-021-05167-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, n(+)-PSi/p-CuO/n-Cu2O bilayered heterostructure has been fabricated and tested against CO2 gas. p-type cupric oxide CuO was fabricated by a two-step thermal evaporation/oxidation process of copper (Cu) thin films. Subsequently, the n-type cuprous oxide Cu2O was deposited by electrochemical method on the top of the CuO/porous silicon (PSi) structure in an aqueous acetate bath [copper acetate (C4H6CuO4) and sodium acetate (C2H3NaO2)]. The current-voltage (I-V) and response time (I-t) characteristics of the heterostructure device to CO2 gas environment were studied. We have demonstrated that the bilayered PSi/CuO/Cu2O structure is sensitive to CO2 gas with a high sensitivity of the order of 80% at low bias potential (0.85 V) and fast response time of the order of 1 s at room temperature. Finally, a CO2 gas sensing mechanism has been proposed.
引用
收藏
页数:13
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