The effect of etching time on the CdZnTe surface

被引：32

作者：

Bensalah, H. ^{[1
]}

Plaza, J. L. ^{[1
]}

Crocco, J. ^{[1
]}

Zheng, Q. ^{[1
]}

Carcelen, V. ^{[1
]}

Bensouici, A. ^{[2
]}

Dieguez, E. ^{[1
]}

机构：

[1] Univ Autonoma Madrid, Crystal Growth Lab, Dept Fis Mat, E-28049 Madrid, Spain

[2] Constantine Univ, Dept Phys Mentouri, Crystallog Lab, Constantine, Algeria

来源：

APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 10期

关键词：

Surface quality; AFM; SEM; Electrical properties; Semiconducting II-VI materials;

D O I：

10.1016/j.apsusc.2010.12.103

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface quality of CdZnTe plays an important role in the performance of sensors based on this material. In this paper the effect of chemical etching on Cd0.9Zn0.1Te sensor performance was examined. Sample surfaces were treated with the same concentration 2% Br-MeOH for different etching times (30 s, 2, 4, 6, 8 min). The surfaces were characterized by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), and I-V Measurement. These results demonstrate that the best surface quality can be obtained by chemical etching for 30 s. Under these experimental conditions, the surface composition Te/Cd + Zn approaches 1, the roughness is lower than 3 nm, and the leakage current shows a value lower than 10 nA. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：4633 / 4636

页数：4

共 6 条

[1] Study of effects of polishing and etching processes on Cd1-xZnxTe surface quality [J].

Bensouici, A. ;

Carcelen, V. ;

Plaza, J. L. ;

De Dios, S. ;

Vijayan, N. ;

Crocco, J. ;

Bensalah, H. ;

Dieguez, E. ;

Elaatmani, M. .

JOURNAL OF CRYSTAL GROWTH, 2010, 312 (14) :2098-2102

[2]

Carcelén V, 2008, J OPTOELECTRON ADV M, V10, P3135

[3] Effect of surface preparation technique on the radiation detector performance of CdZnTe [J].

Duff, M. C. ;

Hunter, D. B. ;

Burger, A. ;

Groza, M. ;

Buliga, V. ;

Black, D. R. .

APPLIED SURFACE SCIENCE, 2008, 254 (09) :2889-2892

[4]

Hossain A., 2008, J ELECT MAT, V37, P9

[5] CdZnTe Frisch collar detectors for γ-ray spectroscopy [J].

Kargar, A ;

Jones, AM ;

McNeil, WJ ;

Harrison, MJ ;

McGregor, DS .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2006, 558 (02) :497-503

[6] Surface passivation of CdZnTe wafers [J].

Wang, Xiaoqin ;

Jie, Wanqi ;

Li, Qiang ;

Gu, Zhi .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2005, 8 (06) :615-621

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