Origin of the interface dipole at interfaces between undoped organic semiconductors and metals

被引：74
|
作者：
Knupfer, M [1 ]
Paasch, G [1 ]
机构：
[1] Leibniz Inst Festkorper & Werkstofforsch Dresden, D-01171 Dresden, Germany
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2005年 / 23卷 / 04期
关键词：
D O I：
10.1116/1.1885021
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Interfaces between metals and intrinsic organic semiconductors are often characterized by the presence of a relatively large interface dipole confined to a narrow interfacial layer. Different potential contributions to this interface dipole are discussed. (c) 2005 American Vacuum Society.
引用
收藏
页码：1072 / 1077
页数：6
相关论文
共 50 条
  • [1] Electronic properties of interfaces between model organic semiconductors and metals
    Knupfer, M
    Peisert, H
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (06): : 1055 - 1074
  • [2] Chemisorption at interfaces between organic semiconductors and metals: role of the electron affinity
    Knupfer, M
    Schwieger, T
    APPLIED SURFACE SCIENCE, 2005, 252 (01) : 77 - 80
  • [3] Characterization of the interface dipole at organic/metal interfaces
    Crispin, X
    Geskin, V
    Crispin, A
    Cornil, J
    Lazzaroni, R
    Salaneck, WR
    Brédas, JL
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2002, 124 (27) : 8131 - 8141
  • [4] Interface dipole at organic/metal interfaces and organic solar cells
    Crispin, X
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2004, 83 (2-3) : 147 - 168
  • [5] Study on the interface between the organic and inorganic semiconductors
    Jin, Dan
    Wang, Wei
    Rahman, Ateeq
    Lizhen, Jiang
    Zhang, Hanjie
    Li, Haiyang
    He, Pimo
    Bao, Shining
    APPLIED SURFACE SCIENCE, 2011, 257 (11) : 4994 - 4999
  • [6] Interface dipole at metal-organic interfaces: Contribution of metal induced interface states
    Lee, C. S.
    Tang, J. X.
    Zhou, Y. C.
    Lee, S. T.
    APPLIED PHYSICS LETTERS, 2009, 94 (11)
  • [7] Quantum-Chemical Characterization of the Origin of Dipole Formation at Molecular Organic/Organic Interfaces
    Avilov, Igor
    Geskin, Victor
    Cornil, Jerome
    ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (04) : 624 - 633
  • [8] SENSITIVITY ANALYSIS OF DIPOLE LAYERS AT SEMICONDUCTORS INTERFACES
    WILKS, SP
    WILLIAMS, RH
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1995, 72 : 49 - 54
  • [9] Interface dipole formation between GaMnAs and organic material
    Chen, Wenjin
    Li, Baikui
    He, Hongtao
    Wang, Jiannong
    Tam, Hoi Lam
    Cheah, Kok Wai
    Cao, Xiancun
    Wang, Yuqi
    Lian, Guijun
    Xiong, Guangcheng
    16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16), 2009, 193
  • [10] ORIGIN AND PROPERTIES OF INTERFACE STATES AT INSULATOR SEMICONDUCTOR AND SEMICONDUCTOR SEMICONDUCTOR INTERFACES OF COMPOUND SEMICONDUCTORS
    HASEGAWA, H
    OHNO, H
    ISHII, H
    HAGA, T
    ABE, Y
    TAKAHASHI, H
    APPLIED SURFACE SCIENCE, 1989, 41-2 : 372 - 382
12345