Investigation of multifunctional characteristics in SmFeO3-BaTiO3 perovskite system for devices

被引:5
作者
Brahma, F. [1 ]
Mohanty, Bhagyashree [2 ]
Bhattacharjee, S. [1 ]
Hota, R. L. [1 ]
Parida, R. K. [2 ]
Parida, B. N. [1 ]
机构
[1] Deemed be Univ, Dept Phys, Cent Inst Technol, MHRD,BTAD, Assam 783370, India
[2] Siksha O Anusandhan Univ, Fac Engn & Technol, Dept Phys, Bhubaneswar 751030, India
关键词
XRD; RAMAN; Dielectric; Ferroelectric; HIGH DIELECTRIC-CONSTANT; FERROELECTRIC CHARACTERISTICS; MAGNETIC-PROPERTIES; CERAMICS; RAMAN; BEHAVIOR; DY;
D O I
10.1016/j.mssp.2021.106071
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The polycrystalline ceramic (SmFeO3)(0.5) (BaTiO3)(0.5) (SF-BT) is synthesized by high temperature solid state reaction method. The sample is investigated for its multifunctionality by analyzing its structural, dielectric, electrical and multiferroic properties. The XRD patterns and the rietveld refinement confirm the single phase forming of the compound in the tetragonal symmetry with P4mm space group. The dielectric properties of the material analyzed on the basis of Maxwell-Wagner phonological model. The room temperature dielectric constant reveals material can be useful for multilayer capacitor. Complex impedance and modulus studies confirm non-Debye type, negative temperature coefficient of resistance (NTCR) behavior and the electrical resistance in the material is only due to contribution grains. The short-range mobility of charge carriers is responsible for different types relaxation mechanism in the material. The Multiferroic studies show the existence of room temperature ferroelectric (fermelectric (2P = 1.17 mu C/cm(2), E-C = 0.65 kV/cm) and ferromagnetism (M-r = 0.77emu/g at H-C = 1.1 kOe) properties in the material. The study reveals the leakage behavior of the material is reduced significantly and enhanced Multifermic character for microelectric and memory devices.
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页数:8
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