Modulation of 2DEG in AlGaN/GaN heterostructures by P(VDF-TrFE)

被引：6

作者：

Wang, Ze-gao ^{[1
]}

Chen, Yuan-fu ^{[1
]}

Chen, Chao ^{[1
]}

Hao, Xin ^{[1
]}

Liu, Xing-zhao ^{[1
]}

Zhang, Wan-li ^{[1
]}

Li, Yan-rong ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2011年 / 26卷 / 02期

基金：

中国国家自然科学基金;

关键词：

CHARGE CONTROL; THIN-FILMS; POLARIZATION; MOBILITY; GROWTH;

D O I：

10.1088/0268-1242/26/2/025010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A nearly square-like ferroelectric hysteretic loop of spin-coated and crystallized poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) with a remnant polarization 2 Pr of 20 mu C cm(-2) was obtained. The electrical transport properties of the P(VDF-TrFE)/AlGaN/GaN structure were investigated. The results show that the carrier density N-s, mobility mu, and resistivity rho of AlGaN/GaN 2DEG can be directly and strongly modulated by an external electric field via the ferroelectric polymer P(VDF-TrFE): the N-s, mu, and rho of AlGaN/GaN 2DEG exhibit closed hysteretic loops under a closed external electric field and the carrier density can be tuned as large as 235% only by changing the external electric field.

引用

页数：4

共 15 条

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