On origin and intrinsic electrical properties of the colossal dielectric constant state in CaCu3Ti4O12

被引：8

作者：

Deng, G. ^{[1
]}

Muralt, P. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Ceram Lab, CH-1015 Lausanne, Switzerland

来源：

FUNDAMENTALS AND TECHNOLOGY OF MULTIFUNCTIONAL OXIDE THIN FILMS (SYMPOSIUM G, EMRS 2009 SPRING MEETING) | 2010年 / 8卷

关键词：

THIN-FILMS; DEPOSITION; TITANATE;

D O I：

10.1088/1757-899X/8/1/012016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The CaCu3Ti4O12 (CCTO) thin films were deposited on Pt/TiO2/Ti/SiO2/Si (100) substrates by pulsed laser deposition. The temperature dependences of dielectric constant were measured in the as-produced thin film samples, showing the so-called colossal dielectric constant (CDC) phenomenon. I-V and C-V characterizations evidenced that the electrode interface formed a Schottky barrier, whose depletion capacitance resulted in the observed CDC in CCTO thin films, while the interior of the material was found to be a p-type doped semiconductor. The CDC state of CCTO can be switched off by annealing the samples in air at 600 to 700 degrees C. In the non-CDC state, the intrinsic dielectric constant of CCTO increases on cooling, showing an incipient ferroelectric feature. XPS depth profiles indicate that the p-type doped state in the bulk corresponds to partially reduced Cu++ ions combined with oxygen vacancies.

引用

页数：4

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