Electronic Transport in Graphene Heterostructures

被引：69
作者：
Young, Andrea F. [1 ]
Kim, Philip [1 ]
机构：
[1] Columbia Univ, Dept Phys, New York, NY 10027 USA
来源：
ANNUAL REVIEW OF CONDENSED MATTER PHYSICS, VOL 2 | 2011年 / 2卷
关键词：
electronic transport; graphene; quantum Hall effect; p-n junction; Klein tunneling; MASSLESS DIRAC FERMIONS; IMPURITY SCATTERING; KLEIN PARADOX; CARBON; GRAPHITE; INTERFERENCE; OSCILLATIONS; REFLECTION; BARRIER; PHYSICS;
D O I：
10.1146/annurev-conmatphys-062910-140458
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The elementary excitations of monolayer graphene, which behave as massless Dirac particles, make it a fascinating venue in which to study relativistic quantum phenomena. One notable example is Klein tunneling, a phenomena in which electrons convert to holes to tunnel through a potential barrier. However, the omnipresence of charged impurities in substrate-supported samples keep the overall charge distribution nonuniform, obscuring much of this "Dirac" point physics in large samples. Using local gates, one can create tunable heterojunctions in graphene, isolating the contribution of small regions of the samples to transport. In this review, we give an overview of quantum transport theory and experiment on locally gated graphene heterostructures, with an emphasis on bipolar junctions.
引用
收藏
页码：101 / 120
页数：20
相关论文
共 110 条
[61]   Fabrication of graphene p-n-p junctions with contactless top gates [J].
Liu, Gang ;
Velasco, Jairo, Jr. ;
Bao, Wenzhong ;
Lau, Chun Ning .
APPLIED PHYSICS LETTERS, 2008, 92 (20)
[62]   Disorder-Induced Enhancement of Transport through Graphene p-n Junctions [J].
Long, Wen ;
Sun, Qing-feng ;
Wang, Jian .
PHYSICAL REVIEW LETTERS, 2008, 101 (16)
[63]   INTEGER QUANTUM HALL TRANSITION - AN ALTERNATIVE APPROACH AND EXACT RESULTS [J].
LUDWIG, AWW ;
FISHER, MPA ;
SHANKAR, R ;
GRINSTEIN, G .
PHYSICAL REVIEW B, 1994, 50 (11) :7526-7552
[64]   Novel electric field effects on Landau levels in graphene [J].
Lukose, Vinu ;
Shankar, R. ;
Baskaran, G. .
PHYSICAL REVIEW LETTERS, 2007, 98 (11)
[65]   Observation of electron-hole puddles in graphene using a scanning single-electron transistor [J].
Martin, J. ;
Akerman, N. ;
Ulbricht, G. ;
Lohmann, T. ;
Smet, J. H. ;
Von Klitzing, K. ;
Yacoby, A. .
NATURE PHYSICS, 2008, 4 (02) :144-148
[66]   Disorder, pseudospins, and backscattering in carbon nanotubes [J].
McEuen, PL ;
Bockrath, M ;
Cobden, DH ;
Yoon, YG ;
Louie, SG .
PHYSICAL REVIEW LETTERS, 1999, 83 (24) :5098-5101
[67]   Current saturation in zero-bandgap, topgated graphene field-effect transistors [J].
Meric, Inanc ;
Han, Melinda Y. ;
Young, Andrea F. ;
Ozyilmaz, Barbaros ;
Kim, Philip ;
Shepard, Kenneth L. .
NATURE NANOTECHNOLOGY, 2008, 3 (11) :654-659
[68]   Guided Plasmons in Graphene p-n Junctions [J].
Mishchenko, E. G. ;
Shytov, A. V. ;
Silvestrov, P. G. .
PHYSICAL REVIEW LETTERS, 2010, 104 (15)
[69]   Role of contacts in graphene transistors: A scanning photocurrent study [J].
Mueller, T. ;
Xia, F. ;
Freitag, M. ;
Tsang, J. ;
Avouris, Ph. .
PHYSICAL REVIEW B, 2009, 79 (24)
[70]   Two-dimensional atomic crystals [J].
Novoselov, KS ;
Jiang, D ;
Schedin, F ;
Booth, TJ ;
Khotkevich, VV ;
Morozov, SV ;
Geim, AK .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2005, 102 (30) :10451-10453
234567891011