Electronic Transport in Graphene Heterostructures

被引:69
作者
Young, Andrea F. [1 ]
Kim, Philip [1 ]
机构
[1] Columbia Univ, Dept Phys, New York, NY 10027 USA
来源
ANNUAL REVIEW OF CONDENSED MATTER PHYSICS, VOL 2 | 2011年 / 2卷
关键词
electronic transport; graphene; quantum Hall effect; p-n junction; Klein tunneling; MASSLESS DIRAC FERMIONS; IMPURITY SCATTERING; KLEIN PARADOX; CARBON; GRAPHITE; INTERFERENCE; OSCILLATIONS; REFLECTION; BARRIER; PHYSICS;
D O I
10.1146/annurev-conmatphys-062910-140458
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The elementary excitations of monolayer graphene, which behave as massless Dirac particles, make it a fascinating venue in which to study relativistic quantum phenomena. One notable example is Klein tunneling, a phenomena in which electrons convert to holes to tunnel through a potential barrier. However, the omnipresence of charged impurities in substrate-supported samples keep the overall charge distribution nonuniform, obscuring much of this "Dirac" point physics in large samples. Using local gates, one can create tunable heterojunctions in graphene, isolating the contribution of small regions of the samples to transport. In this review, we give an overview of quantum transport theory and experiment on locally gated graphene heterostructures, with an emphasis on bipolar junctions.
引用
收藏
页码:101 / 120
页数:20
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