Interaction between the porosity MAX-phase Ti-Si-C and melt copper

被引：0
|
作者：
Oglezneva, Svetlana [1 ]
Talako, Tatiana [2 ]
Ogleznev, Nikita [1 ]
机构：
[1] Perm Natl Res Polytech Univ, Komsomolsky Av 29, Perm 614990, Russia
[2] State Sci Inst Powder Met Inst, Platonova Str 41, Minsk 220005, BELARUS
来源：
MATERIALS TODAY-PROCEEDINGS | 2019年 / 19卷
基金：
俄罗斯基础研究基金会;
关键词：
Copper; Ti3SiC2; Infiltration; Structure; Deintercalation; Composite material; TEMPERATURE; CU-TI3SIC2;
D O I：
10.1016/j.matpr.2019.07.228
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
It has been investigated the formation of structure and properties in the sintering with infiltration the Ti3SiC2 by the copper with the X-ray phase analysis, electron microscopy, energy dispersive analysis. The features of the structure formation of composition of materials during the sintering is deintercalation silicon from Ti3SiC2, formation of the solid solution of carbon-based titanium silicide Ti5Si3(C), small amounts of titanium carbide, silicon, and formation of the solid solution of Si in Cu. A suggested composition may be used as a new composite material for the electrode-tool for EDM. (C) 2019 Elsevier Ltd. All rights reserved.
引用
收藏
页码：2144 / 2147
页数：4
相关论文
共 50 条
  • [1] Deposition and characterization of MAX-phase containing Ti-Si-C thin films by sputtering using elemental targets
    Sonoda, Tsutomu
    Nakao, Setsuo
    Ikeyama, Masami
    VACUUM, 2013, 92 : 95 - 99
  • [2] Homoepitaxial growth of Ti-Si-C MAX-phase thin films on bulk Ti3SiC2 substrates
    Eklund, P.
    Murugaiah, A.
    Emmerlich, J.
    Czigany, Zs.
    Frodelius, J.
    Barsoum, M. W.
    Hogberg, H.
    Hultman, L.
    JOURNAL OF CRYSTAL GROWTH, 2007, 304 (01) : 264 - 269
  • [3] Phase relations in the Ti-Si-C system
    Wakelkamp, W.J.J.
    van Loo, F.J.J.
    Metselaar, R.
    1600, (08):
  • [4] SHS of MAX compounds in the Ti-Si-C system: Influence of mechanical activation
    Vadchenko S.G.
    Sytschev A.E.
    Kovalev D.Y.
    Shchukin A.S.
    Belikova A.F.
    Int. J. Self-Propagating High-Temperature Synth., 3 (141-144): : 141 - 144
  • [5] GAS-PHASE DEPOSIT IN TI-SI-C SYSTEM
    NICKL, JJ
    SCHWEITZER, KK
    LUXENBERG, P
    JOURNAL OF THE LESS-COMMON METALS, 1972, 26 (03): : 335 - +
  • [6] Microstructural relationships between compounds in the Ti-Si-C system
    Lin, Z. J.
    Zhuo, M. J.
    Zhou, Y. C.
    Li, M. S.
    Wang, J. Y.
    SCRIPTA MATERIALIA, 2006, 55 (05) : 445 - 448
  • [7] Phase and morphology evolution of TiC in the Ti-Si-C system
    Zhang, Zongbo
    Luo, Yongming
    Xu, Caihong
    INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS, 2012, 34 : 32 - 35
  • [8] Composites in the Ti-Si-C system
    Park, CS
    Zheng, F
    Salamone, S
    Bordia, R
    CERAMIC PROCESSING SCIENCE, 1998, 83 : 73 - 73
  • [9] Preparation of MAX-Phase-Containing Ti-Si-C Thin Films by Magnetron Sputtering Using Elemental Targets
    Sonoda, Tsutomu
    Nakao, Setsuo
    Ikeyama, Masami
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (01)
  • [10] Processing of composites in the Ti-Si-C system
    C.-S. Park
    F. Zheng
    S. Salamone
    R. K. Bordia
    Journal of Materials Science, 2001, 36 : 3313 - 3322
12345