RF/analog and linearity performance analysis of SiGe source ETLTFET with emphasis on temperature

被引：2
作者：
Debnath, Radhe Gobinda [1 ]
Baishya, Srimanta [1 ]
机构：
[1] Natl Inst Technol, Dept Elect & Commun Engn, Silchar 788010, Assam, India
来源：
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2022年 / 113卷 / 01期
基金：
英国科研创新办公室;
关键词：
RF; Linearity; Intermodulation distortion; BTBT; Epitaxial layer; TFET; FIELD; GATE; DEPENDENCE; IMPACT; ANALOG; RF;
D O I：
10.1007/s10470-022-02080-5
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This study comprises a simulated assessment of the influence of temperature on transfer characteristics of SiGe source-based Epitaxial layer tunnel field effect transistor (SiGe source ETLTFET). Using the transfer characteristics, the temperature dependence of the RF/analog parameters: transconductance (g(m)), intrinsic capacitances, cut-off frequency (f(T)), transconductance generation factor (TGF), transconductance frequency product (TFP), transit time (tau) and minimum noise figure (NFmin) are also presented. Finally, the linearity metrics including higher-order transconductance (g(m2) and g(m3)), input intercept point (IIP3), voltage intercept point (VIP3), intermodulation distortion (IMD3), and 1-dB compression point was evaluated for a wide range of temperature. The findings revealed a substantial impact of temperature on the RF/analog and linearity characteristics. As the temperature rises from 250 to 350 K, the RF/analog characteristics improved, but the linearity figure of merits deteriorates. Moreover, a degraded noise performance (NFmin increases) of the device at elevated temperature was also witnessed.
引用
收藏
页码：61 / 72
页数：12
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