Preparation of transparent thick films by electrophoretic sol-gel deposition using phenyltriethoxysilane-derived particles

被引：0

作者：

Katagiri, K ^{[1
]}

Hasegawa, K ^{[1
]}

Matsuda, A ^{[1
]}

Tatsumisago, M ^{[1
]}

Minami, T ^{[1
]}

机构：

[1] Univ Osaka Prefecture, Coll Engn, Dept Appl Mat Sci, Osaka 5998531, Japan

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1998年 / 81卷 / 09期

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thick films were prepared on glass substrates coated with indium tin oxide (ITO) via electrophoretic deposition using sols that contained phenylsilsesquioxane (PhSiO3/2) particles derived from phenyltriethoxysilane. The transparency of the thick PhSiO3/2 films was significantly improved via heat treatment at temperatures >200 degrees C. Scanning electron microscopy observation showed that the thick films changed in morphology, from aggregates of particles with several open spaces among the particles to a monolith with no open spaces after the heat treatment. Transparent films similar to 3 mu m thick were obtained when the films were heat-treated at a temperature of 400 degrees C for 2 h.

引用

页码：2501 / 2503

页数：3

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