Effect of sulfur concentration on the properties of tin disulfide thin films by nebulizer spray pyrolysis technique

被引：27

作者：

Arulanantham, A. M. S. ^{[1
]}

Valanarasu, S. ^{[1
]}

Jeyadheepan, K. ^{[2
]}

Kathalingam, A. ^{[3
]}

Kulandaisamy, I. ^{[1
]}

机构：

[1] Arul Anandar Coll, PG & Res Dept Phys, Karumathur 625514, India

[2] SASTRA Univ, Sch Elect & Elect Engn, Multifunct Mat & Devices Lab, Anusandhan Kendra 2, Tirumalaisamudram 613401, Thanjavur, India

[3] Dongguk Univ, Millimeter Wave Innovat Technol Res Ctr MINT, Seoul 04620, South Korea

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2017年 / 28卷 / 24期

关键词：

OPTICAL-PROPERTIES; SNS2; DEPOSITION; BEHAVIOR; LAYERS; TEA;

D O I：

10.1007/s10854-017-7817-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Influence of sulfur concentration variation on the physical and chemical properties of nebulizer spray pyrolysis deposited SnS2 thin films are investigated. The SnS2 thin films were coated onto glass substrate at 325 A degrees C by changing sulfur concentration as 0.8, 0.9 and 1.0 M. Sulfur concentration dependent micro-structural, surface morphological, optical and electrical characteristics of the films were studied using X-ray diffraction, Raman analysis, scanning electron microscope, atomic force microscope, UV-Vis spectroscopy, photoluminescence spectroscopy and Hall Effect measurement, respectively. X-ray diffraction measurements demonstrated the growth of crystalline SnS2 films of hexagonal structure with preferred orientation along (002) plane. Scanning electron microscopic study revealed needle shape and basket knitting shape morphology of deposited films. The films showed direct band gap ranging from 2.02 to 2.18 eV depending on sulfur concentration. Hall measurement revealed the conductivity and mobility ranging from 10(-3) to 10(-2) (1/Omega-cm) and 1.4 x 10(2) to 3.01 x 10(2) (cm(2)/V s) respectively.

引用

页码：18675 / 18685

页数：11

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