Effects of intersubband interaction on multisubband electron transport in single and double quantum wells

被引：3

作者：

Hai, GQ ^{[1
]}

Studart, N

Marques, GE

Peeters, FM

Koenraad, PM

机构：

[1] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP, Brazil

[2] Univ Instelling Antwerp, UIA, Dept Phys, B-2610 Wilrijk, Belgium

[3] Eindhoven Univ Technol, Dept Phys, NL-5600 MB Eindhoven, Netherlands

来源：

PHYSICA E | 1998年 / 2卷 / 1-4期

基金：

巴西圣保罗研究基金会;

关键词：

electron transport; quantum wells; tunneling;

D O I：

10.1016/S1386-9477(98)00048-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The multisubband electron transport properties are studied for doped single quantum well and gated double asymmetric quantum well structures. The effects due to intersubband interaction and screening of the ionized impurity scattering are also investigated. We show that intersubband coupling plays an essential role in describing the screening properties as well as the effect of ionized impurity scattering on the mobility in a doped single quantum well. For coupled double quantum well structures. negative transconductance is found theoretically which is due to resonant tunneling between the two quantum wells. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：222 / 227

页数：6