Microlithography using metastable helium atoms: Patterning of gold film coated with dodecanethiol self-assembled monolayers on mica

被引：9

作者：

Ju, X ^{[1
]}

Kurahashi, M ^{[1
]}

Suzuki, T ^{[1
]}

Yamauchi, Y ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 7B期

关键词：

atom lithography; helium; atom force microscope;

D O I：

10.1143/JJAP.42.4767

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we report the establishment of an experimental, setup and the procedure used for metastable atom lithography. Using a helium metastable atom beam and dodecanethiol (DDT) self-assembled monolayer (SAM), we carried out the patterning of the gold film on muscovite mica having a flat surface. Large-area intact and flat patterns with a nanoscale width of similar to80-110 nm, of the etched step were obtained. From the analysis of the roughness, it was determined that no remaining gold islands were present in the area exposed to the He* atom beam under the optimized experimental parameters: 40-60 min. of exposure time and 8-10 min. of etching time. In addition, the presence of some flaws in the patterns was considered to be due to the scratches on mica substrate.

引用

页码：4767 / 4769

页数：3

共 13 条

[1] Self-assembled monolayers exposed by metastable argon and metastable helium for neutral atom lithography and atomic beam imaging [J].

Bard, A ;

Berggren, KK ;

Wilbur, JL ;

Gillaspy, JD ;

Rolston, SL ;

McClelland, JJ ;

Phillips, WD ;

Prentiss, M ;

Whitesides, GM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (05) :1805-1810

[2] MICROLITHOGRAPHY BY USING NEUTRAL METASTABLE ATOMS AND SELF-ASSEMBLED MONOLAYERS [J].

BERGGREN, KK ;

BARD, A ;

WILBUR, JL ;

GILLASPY, JD ;

HELG, AG ;

MCCLELLAND, JJ ;

ROLSTON, SL ;

PHILLIPS, WD ;

PRENTISS, M ;

WHITESIDES, GM .

SCIENCE, 1995, 269 (5228) :1255-1257

[3] Nanolithography with neutral chromium and helium atoms [J].

Brezger, B ;

Schulze, T ;

Drodofsky, U ;

Stuhler, J ;

Nowak, S ;

Pfau, T ;

Mlynek, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06) :2905-2911

[4] Patterning of hydrogen-passivated Si(100) using Ar(3P0,2) metastable atoms [J].

Hill, SB ;

Haich, CA ;

Dunning, FB ;

Walters, GK ;

McClelland, JJ ;

Celotta, RJ ;

Craighead, HG .

APPLIED PHYSICS LETTERS, 1999, 74 (15) :2239-2241

[5] Patterning of octadecylsiloxane self-assembled monolayers on Si(100) using Ar(3P0,2) atoms [J].

Hill, SB ;

Haich, CA ;

Dunning, FB ;

Walters, GK ;

McClelland, JJ ;

Celotta, RJ ;

Craighead, HG ;

Han, J ;

Tanenbaum, DM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03) :1087-1089

[6] Localization of metastable atom beams with optical standing waves: Nanolithography at the Heisenberg limit [J].

Johnson, KS ;

Thywissen, JH ;

Dekker, NH ;

Berggren, KK ;

Chu, AP ;

Younkin, R ;

Prentiss, M .

SCIENCE, 1998, 280 (5369) :1583-1586

[7] Using neutral metastable argon atoms and contamination lithography to form nanostructures in silicon, silicon dioxide, and gold [J].

Johnson, KS ;

Berggren, KK ;

Black, A ;

Black, CT ;

Chu, AP ;

Dekker, NH ;

Ralph, DC ;

Thywissen, JH ;

Younkin, R ;

Tinkham, M ;

Prentiss, M ;

Whitesides, GM .

APPLIED PHYSICS LETTERS, 1996, 69 (18) :2773-2775

[8]

Kreis M, 1996, APPL PHYS B-LASERS O, V63, P649

[9] Nanoscale atomic lithography with a cesium atom beam [J].

Lison, F ;

Adams, HJ ;

Haubrich, D ;

Kreis, M ;

Nowak, S ;

Meschede, D .

APPLIED PHYSICS B-LASERS AND OPTICS, 1997, 65 (03) :419-421

[10] Nanolithography with metastable neon atoms: Enhanced rate of contamination resist formation for nanostructure fabrication [J].

Rehse, SJ ;

Glueck, AD ;

Lee, SA ;

Goulakov, AB ;

Menoni, CS ;

Ralph, DC ;

Johnson, KS ;

Prentiss, M .

APPLIED PHYSICS LETTERS, 1997, 71 (10) :1427-1429

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