Time-resolved photoluminescence in strained GaN layers

被引：0

作者：

Pozina, G ^{[1
]}

Edwards, NV

Bergman, JP

Monemar, B

Bremser, MD

Davis, RF

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2001年 / 183卷 / 01期

关键词：

D O I：

10.1002/1521-396X(200101)183:1<151::AID-PSSA151>3.0.CO;2-C

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A set of GaN epilayers grown by metalorganic chemical vapor deposition on 6H-SiC substrates was studied by time-resolved photoluminescence (PL) spectroscopy. The PL spectra are dominated by the free A exciton (FEA) and by the neutral-donor-bound exciton (D0X) transitions. The position of FEA indicates that the GaN layers are under tension. We observe that the recombination lifetime for the FEA is about 40-50 ps in all the layers, whereas the recombination time for the D0X varies for different samples. We found that the recombination lifetimes for D0X have a clear dependence on the position of FEA; i.e. the recombination lifetime increases with decreasing strain in the layers. The results can be explained in terms of the character of the hole states involved in the donor-bound exciton recombination.

引用

页码：151 / 155

页数：5

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