Doping impact on the electro-optical properties of a TlBr crystal

被引：9

作者：

Dmitriev, Yuri ^{[1
]}

Bennett, Paul R. ^{[1
]}

Cirignano, Leonard J. ^{[1
]}

Gupta, Tapan K. ^{[1
]}

Higgins, William M. ^{[1
]}

Shah, Kanai S. ^{[1
]}

Wong, Philip ^{[1
]}

机构：

[1] Radiat Monitoring Devices Inc, Watertown, MA 02472 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2007年 / 578卷 / 03期

关键词：

doping; electric conductivity; segregation coefficient; thallium bromide; X-ray;

D O I：

10.1016/j.nima.2007.06.001

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

TlBr doped with In and Pb was synthesized and grown using a vertical Bridgman method. The segregation coefficients of both dopants in TlBr were calculated using the different experimental optical and electrical characteristics of (TlBr)(0.973)-(InBr)(0.027) and (TlBr)(0.972)-(PbBr2)(0.078) crystals. The solubility of In and Pb in the liquid phase is higher than their solubility in solid TlBr:k(s)(In) = 1.06 and k(s)(Pb) = 1.3-1.6. Doping with both impurities leads to degradation of the electrical, optical, and detector properties of TlBr. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：510 / 514

页数：5

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