Pressure-induced phase transition of one-dimensional semiconductor C5H10NH2PbI3

被引：0

作者：

Masui, A ^{[1
]}

Matsuishi, K ^{[1
]}

Onari, S ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Mat Sci, Tsukuba, Ibaraki 3058573, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2001年 / 223卷 / 02期

关键词：

D O I：

10.1002/1521-3951(200101)223:2<501::AID-PSSB501>3.0.CO;2-H

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We studied Raman scattering under hydrostatic pressure for the one-dimensional semiconductor C5H10NH2PbI3 up to 2 GPa, and observed a structural phase transition at 0.4 GPa. Raman modes which originate from 6-ring and H-N-C vibrations of C5H10NH2+ molecules show abrupt changes in their peak positions and linewidths at 0.4 GPa. Narrowing of these modes at the transition pressure is Explained by ordering of organic molecules. External phonon modes in the range of 20-200 cm(-1) also change abruptly at about 0.4 GPa. The results indicate that this pressure-induced structural phase transition is governed by rotational and orientational ordering of C5H10NH2+ molecules.

引用

页码：501 / 505

页数：5