Recent development and future prospects of Power SiC devices.

被引：0

作者：

Nakamura, T. ^{[1
]}

Nakano, Y. ^{[1
]}

Aketa, M. ^{[1
]}

Hanada, T. ^{[1
]}

机构：

[1] ROHM Co Ltd, Power Elect R&D Unit, Ukyo Ku, Kyoto 6158585, Japan

来源：

2014 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-HIROSHIMA 2014 - ECCE-ASIA) | 2014年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Silicon Carbide (SiC) devices have the potential to reduce energy losses in high power applications. However SiC devices have yet to achieve ideal performance levels. The SiC diodes and MOSFETs with advanced trench structures succeeded in improving performance by reduction of the internal electric field. In addition, transfer mold type power modules using SiC devices demonstrated high temperature operation and high power density.

引用

页码：2074 / 2074

页数：1