The effect of neutron irradiation on the exciton absorption in gallium arsenide

被引：3

作者：

Jibuti, ZV ^{[1
]}

Dolidze, ND ^{[1
]}

Tsekvava, BE ^{[1
]}

Eristavi, GL ^{[1
]}

机构：

[1] Tbilisi State Univ, GE-380086 Tbilisi, Georgia

来源：

TECHNICAL PHYSICS LETTERS | 2003年 / 29卷 / 07期

关键词：

Absorption Coefficient; Gallium; Arsenide; Neutron Irradiation; Gallium Arsenide;

D O I：

10.1134/1.1598542

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the effect of neutron irradiation on the exciton absorption in n-GaAs crystals. It is shown that the observed decrease in the absorption coefficient, broadening of the exciton peak, and its shift toward higher energies are caused by the electric and strain (compression) fields generated by the radiation-induced defects. (C) 2003 MAIK "Nauka / Interperiodica".

引用

页码：540 / 541

页数：2

共 11 条

[1]

ABDULLAEV MA, 1974, SOV PHYS SEMICOND+, V7, P1476

[2] INFLUENCE OF PHONONS AND IMPURITIES ON BROADENING OF EXCITONIC SPECTRA IN GALLIUM-ARSENIDE [J].

ALPEROVICH, VL ;

ZALETIN, VM ;

KRAVCHENKO, AF ;

TEREKHOV, AS .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 77 (02) :465-472

[3]

DOLIDZE N, 2002, B GEORGIAN ACAD SCI, V166, P259

[4]

JIBUTI ZV, 1987, SOOBSHCH AKAD NAUK G, V125, P297

[5] On the effect of a dopant on the formation of disordered regions in GaAs under irradiation with fast neutrons [J].

Klad'ko, VP ;

Plyatsko, SV .

SEMICONDUCTORS, 1998, 32 (03) :235-237

[6]

Lang D. V., 1977, I PHYS C SER, V31, P70

[7]

MADELUNG O, 1964, PHYSICS 3 5 COMPOUND

[8]

Pankove J., 1975, OPTICAL PROCESSES SE

[9]

Rashba E. I., 1985, EXCITONS

[10]

SAFAROV VI, 1970, SOV PHYS-SOLID STATE, V12, P2831

← 1 2 →