EKV3 parameter extraction and characterization of 90nm RF-CMOS technology

被引：0
作者：
Yoshitomi, S.
Bazigos, A.
Bucher, M.
机构：
来源：
MIXDES 2007: Proceedings of the 14th International Conference on Mixed Design of Integrated Circuits and Systems: | 2007年
关键词：
EKV3; model; compact modelling; RF CMOS; RF parasitics; parameter extraction; scaling;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
EKV3 is a circuit-design-oriented compact MOSFET model for analog/RF IC design. The paper presents parameter extraction guidelines and modelling using EKV3 for TOSHIBA's 90nm RF-CMOS technology covering DC, CV and RF (S-parameter) and temperature scalability. RF verification was done by the use of multi-finger MOSFETs with many variations of gate length, width of unit fingers and number of fingers. A scalable RF model was successfully created. Extraction of RF parasitics and their scaling with RF layout is investigated. The EKV3 model successfully predicted high-frequency behaviour of 90nm CMOS up to 20GHz over a wide range of bias conditions.
引用
收藏
页码：74 / 79
页数：6
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