Optimization of a Photonically Controlled Microwave Switch and Attenuator

被引：18

作者：

Flemish, Joseph R. ^{[1
,2
]}

Haupt, Randy L. ^{[1
]}

机构：

[1] Penn State Univ, Appl Res Lab, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2010年 / 58卷 / 10期

关键词：

Microwave attenuator; photoconductive; RF switch; silicon; COPLANAR-WAVE-GUIDE; SILICON; LOSSES; SI;

D O I：

10.1109/TMTT.2010.2065350

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A silicon-based photoconductive switch and attenuator for microwave signals has been demonstrated and optimized for low insertion loss and high attenuation response upon illumination from a standard infrared LED. This device is fabricated within a coplanar waveguide for easy integration into a planar antenna for photonic control of an array. A general tradeoff exists between the goals of low insertion loss and high attenuation range. However, design and process enhancements are found to improve the device performance. A device that offers up to 20-dB attenuation with insertion loss of only 0.6 dB at 2.0 GHz is demonstrated. These devices show a frequency range where the insertion phase shift upon attenuation is significantly less than 1 degrees/dB.

引用

页码：2582 / 2588

页数：7

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