New dry tool after cleaning of low-k dielectrics

被引：0

作者：

Okuda, S

Sugimoto, H

Hashizume, A

Tsujikawa, H

Imai, M

Asai, G

机构：

[1] Dainippon Screen Mfg Co Ltd, Kamigyo Ku, Kyoto, Japan

[2] DNS Elect, Carrollton, TX 75006 USA

来源：

ULTRA CLEAN PROCESSING OF SILICON SURFACES V | 2003年 / 92卷

关键词：

low-K; DPH; dry; BEOL; polymer; cleaning; dielectric; porous; ILD;

D O I：

10.4028/www.scientific.net/SSP.92.287

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It has been pointed out that, when low-K films for intermediate layer dielectrics (ILD) are used in BEOL processes, cleaning for residue removal (polymer removal) after etching, resist stripping, and ashing causes the dielectric constant K value to rise. We have established an effective drying method to reduce the rise in dielectric constant K by using a DPH (depressurized hotplate) after polymer removal.

引用

页码：287 / 291

页数：5