CMOS wideband amplifiers using multiple inductive-series peaking technique

被引：126

作者：

Wu, CH ^{[1
]}

Lee, CH

Chen, WS

Liu, SI

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2005年 / 40卷 / 02期

关键词：

inductive-series peaking; transimpedance amplifier; wideband amplifier;

D O I：

10.1109/JSSC.2004.840979

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the technique of multiple inductive-series peaking to mitigate the deteriorated parasitic capacitance in CMOS technology. Employing. multiple inductive-series peaking technique, a 10-Gb/s optical transimpedance amplifier (TIA) has been implemented in a 0.18-mum CMOS process. The 10-Gb/s optical CMOS TIA, which accommodates a PD capacitor of 250 fF, achieves the gain of 61 dBOmega and 3-dB frequency of 7.2 GHz. The noise measurement shows,the average noise current of 8.2 pA/rootHz with power consumption of 70 mW.

引用

页码：548 / 552

页数：5

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