Advances in ion beam modification of semiconductors

被引：36
作者：
Elliman, R. G. [1 ]
Williams, J. S. [1 ]
机构：
[1] Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
来源：
CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE | 2015年 / 19卷 / 01期
关键词：
Ion implantation; Semiconductor; Silicon; Germanium; Silicon carbide; Zinc oxide; Gallium nitride; PHASE EPITAXIAL-GROWTH; DOPANT DIFFUSION; IMPLANTED GAN; ELECTRICAL ISOLATION; JUNCTION FORMATION; SHALLOW JUNCTIONS; SPIN QUBIT; SILICON; SI; ACTIVATION;
D O I：
10.1016/j.cossms.2014.11.007
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This review provides an overview of the current status of ion-implantation research in silicon, germanium and the compound semiconductors SiC, GaN and ZnO. The discussion of silicon includes recent developments in metrology and device simulation, as well as a brief discussion of emerging applications in photovoltaics and quantum electronics. That of Ge includes a more detailed overview of doping, radiation damage and annealing processes due to the renewed research interest in this material. Finally, the discussion of compound semiconductors focuses on the newer wide bandgap materials where there are remaining implantation issues to be solved and potentially new implantation applications emerging. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：49 / 67
页数：19
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