Effects of annealing on the electrical properties of highly resistive float zone p-type silicon

被引：1

作者：

Vankova, V. ^{[1
]}

Kingon, A. I. ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

PHYSICA B-CONDENSED MATTER | 2007年 / 401卷 / 155-158期

关键词：

high-resistivity silicon; electrical properties; heat treatment;

D O I：

10.1016/j.physb.2007.08.135

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This paper reports effects of heat treatment in nitrogen or forming gas ambient on the electrical properties of highly resistive float zone p-type silicon (Si). Capacitance-voltage and Hall Effect measurements were used to examine role of impurities associated with annealing. A reduction in the free carrier density was observed for both the nitrogen and forming gas anneals. In addition, temperature-dependent capacitance measurements revealed the appearance of deep traps with a concentration of 2 x 10(11) cm(-3), following the nitrogen anneal. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：155 / 158

页数：4

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