Scanning tunnelling microscopy and spectroscopy on organic PTCDA films deposited on sulfur passivated GaAs(001)

被引：28
|
作者：
Nicoara, N
Custance, O
Granados, D
García, JM
Gómez-Rodríguez, JM
Baró, AM
Méndez, J
机构：
[1] Univ Autonoma Madrid, Dept Fis Mat Condensada C 3, Lab Nuevas Microscopia, E-28049 Madrid, Spain
[2] CSIC, Inst Microelect, E-28760 Madrid, Spain
[3] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2003年 / 15卷 / 38期
关键词：
D O I：
10.1088/0953-8984/15/38/003
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Deposition of 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) on sulfur passivated gallium arsenide S-GaAs(001) surfaces is investigated by scanning tunnelling microscopy and scanning tunnelling spectroscopy. The surface morphology and the film structure are studied for the multilayer growth of the organic molecules. Spectroscopic results for both clean substrate and ordered areas of PTCDA are shown in this work. We have measured I-V plots at different tip-sample distances, avoiding deformation of the organic layer. Under proper experimental conditions, a gap value of 2.2 eV has been measured on PTCDA crystals, in good agreement with the expected value for PTCDA (2.2-2.55 eV).
引用
收藏
页码：S2619 / S2629
页数：11
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