Accurate characterization of next-generation thin-film photodetectors

被引:521
|
作者
Fang, Yanjun [1 ]
Armin, Ardalan [2 ]
Meredith, Paul [2 ]
Huang, Jinsong [1 ]
机构
[1] Univ N Carolina, Dept Appl Phys Sci, Chapel Hill, NC 27599 USA
[2] Swansea Univ, Dept Phys, Swansea, W Glam, Wales
基金
美国国家科学基金会; 英国工程与自然科学研究理事会;
关键词
LINEAR DYNAMIC-RANGE; ULTRAVIOLET PHOTODETECTORS; BROAD-BAND; LOW-NOISE; GAIN;
D O I
10.1038/s41566-018-0288-z
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The performance of photodetectors fabricated from emerging semiconductors such as perovskites, quantum dots, two-dimensional materials or organics, for example, can be prone to misinterpretation. This Comment exposes the problems and proposes some guidelines for accurate characterization.
引用
收藏
页码:1 / 4
页数:4
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